Growth of Aluminium Nitride Whisker by Vapor Phase Reaction
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چکیده
منابع مشابه
Aluminum Nitride Substrate Growth by Halide Vapor Transport Epitaxy
High-quality AlN layers with thickness up to 50 mm have been grown by HVTE at growth rates up to 60mm/h at deposition temperatures of 1000–11001C in the pressure range of 50–760Torr. The HVT process uses an aluminum chloride amine adduct as the aluminum source and ammonia for the nitrogen. This new technique eliminates the main difficulties of the conventional HVPE growth, where aluminum oxidat...
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ژورنال
عنوان ژورنال: NIPPON KAGAKU KAISHI
سال: 1972
ISSN: 2185-0925,0369-4577
DOI: 10.1246/nikkashi.1972.2344